Discrete Semiconductor Products
SI3909DV-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2P-CH 20V 6TSOP
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Discrete Semiconductor Products
SI3909DV-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2P-CH 20V 6TSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI3909DV-T1-GE3 |
|---|---|
| Configuration | 2 P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 1.15 W |
| Rds On (Max) @ Id, Vgs [Max] | 200 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 500 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI3909 Series
Mosfet Array 20V 1.15W Surface Mount 6-TSOP
Documents
Technical documentation and resources
No documents available