
Discrete Semiconductor Products
BC847CT-7-F
ActiveDiodes Inc
SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 45V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
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Discrete Semiconductor Products
BC847CT-7-F
ActiveDiodes Inc
SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 45V V(BR)CEO, 1-ELEMENT, NPN, SILICON, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | BC847CT-7-F |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 420 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power - Max [Max] | 150 mW |
| Supplier Device Package | SOT-523 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC847BVNQ Series
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Documents
Technical documentation and resources