Discrete Semiconductor Products
RGC80TSX8RGC11
NRNDRohm Semiconductor
REVERSE CONDUCTING TYPE, 1800V 40A, INTEGRATED DIODE, TO-247N, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGC80TSX8RGC11
NRNDRohm Semiconductor
REVERSE CONDUCTING TYPE, 1800V 40A, INTEGRATED DIODE, TO-247N, FIELD STOP TRENCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGC80TSX8RGC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 468 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 535 W |
| Supplier Device Package | TO-247N |
| Switching Energy | 1.6 mJ, 1.85 mJ |
| Td (on/off) @ 25°C [custom] | 80 ns |
| Td (on/off) @ 25°C [custom] | 565 ns |
| Test Condition | 40 A, 600 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGC80TSX8R Series
RGC80TSX8R is the reverse conducting IGBT for voltage-resonance inverter, IH applications.
Documents
Technical documentation and resources