Discrete Semiconductor Products

PHP193NQ06T,127

Obsolete

MOSFET N-CH 55V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP193NQ06T,127

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	85.6 nC
Input Capacitance (Ciss) (Max)	5082 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	300 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Package / Case	Package Name	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)
NXP USA Inc. PHP193NQ06T,127	20 V	-55 °C	175 °C	5082 pF	85.6 nC	75 A	Through Hole	N-Channel	4 mOhm	55 V	TO-220-3	TO-220AB	300 W	MOSFET (Metal Oxide)	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Technical documentation and resources