Discrete Semiconductor Products

PHP193NQ06T,127

Obsolete

MOSFET N-CH 55V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP193NQ06T,127

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85.6 nC
Input Capacitance (Ciss) (Max) @ Vds	5082 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case
Freescale Semiconductor - NXP PHP193NQ06T,127	55 V	85.6 nC	4 mOhm	MOSFET (Metal Oxide)	Through Hole	TO-220AB	-55 °C	175 ░C	75 A	N-Channel	5082 pF	20 V	10 V	300 W	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Technical documentation and resources