Specification	XPN7R104NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1290 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	65 W
Power Dissipation (Max)	840 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	8-TSON Advance-WF
Supplier Device Package [x]	3.1
Supplier Device Package [y]	3.1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

XPN7R104NC Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 20 A, 0.0071 Ω@10V, TSON Advance(WF)

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Mounting Type	FET Type	Package / Case	Qualification	Vgs (Max)	Operating Temperature	Grade	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage XPN7R104NC,L1XHQ	1290 pF	65 W	840 mW	21 nC	2.5 V	MOSFET (Metal Oxide)	Surface Mount	N-Channel	8-PowerVDFN	AEC-Q101	20 V	175 °C	Automotive	7.1 mOhm	20 A	40 V	8-TSON Advance-WF	3.1	3.1	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 20 A, 0.0071 Ω@10V, TSON Advance(WF)

Technical documentation and resources