SI4128BDY-T1-GE3

Obsolete

MOSFET N-CH 30V

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V

Technical Specifications

Parameters and characteristics for this part

Specification	SI4128BDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8.3 A, 12 A
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
Vgs (Max)	25 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI4128DY-T1-E3	4.5 V 10 V	N-Channel	2.5 V	Surface Mount	30 V	10.9 A	2.4 W 5 W	12 nC	-55 °C	150 °C	20 V	435 pF	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	8-SOIC
Vishay General Semiconductor - Diodes Division SI4128BDY-T1-GE3	4.5 V 10 V					8.3 A 12 A					25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

8.3A (Ta), 12A (Tc)

Technical documentation and resources