Discrete Semiconductor Products

SI7308DN-T1-GE3

LTB

TRANS MOSFET N-CH 60V 5.4A 8-PIN POWERPAK 1212 T/R

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Discrete Semiconductor Products

LTB

TRANS MOSFET N-CH 60V 5.4A 8-PIN POWERPAK 1212 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SI7308DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	19.8 W, 3.2 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division SI7308DN-T1-GE3	N-Channel	6 A	3.2 W 19.8 W	20 nC	58 mOhm	20 V	PowerPAK® 1212-8	665 pF	Surface Mount	60 V	-55 °C	150 °C	3 V	PowerPAK® 1212-8	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources