Discrete Semiconductor Products

SI7308DN-T1-GE3

LTB

TRANS MOSFET N-CH 60V 5.4A 8-PIN POWERPAK 1212 T/R

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Discrete Semiconductor Products

LTB

TRANS MOSFET N-CH 60V 5.4A 8-PIN POWERPAK 1212 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SI7308DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	665 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Power Dissipation (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	FET Type	Technology	Package Name
Vishay Dale SI7308DN-T1-GE3	20 nC	665 pF	PowerPAK® 1212-8	Surface Mount	3.2 W 19.8 W	58 mOhm	60 V	6 A	3 V	10 V	4.5 V	-55 °C	150 °C	20 V	N-Channel	MOSFET (Metal Oxide)	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources