RJK4002DPP-M0#T2

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MOSFET N-CH 400V 3A TO220FL

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Discrete Semiconductor Products

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MOSFET N-CH 400V 3A TO220FL

Technical Specifications

Parameters and characteristics for this part

Specification	RJK4002DPP-M0#T2

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	165 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	2.9 Ohm
Supplier Device Package	TO-220FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation RJK4002DJE-00#Z0	400 V	10 V	165 pF	Formed Leads TO-226-3 TO-92-3 Long Body	3 A	2.54 W	TO-92MOD	Through Hole	6 nC	2.9 Ohm	N-Channel	MOSFET (Metal Oxide)	30 V	150 °C
Renesas Electronics Corporation RJK4002DPP-M0#T2	400 V	10 V	165 pF	TO-220-3 Full Pack	3 A	20 W	TO-220FL	Through Hole	6 nC	2.9 Ohm	N-Channel	MOSFET (Metal Oxide)	30 V	150 °C
Renesas Electronics Corporation RJK4002DPD-00#J2	400 V	10 V	165 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	3 A		MP-3A	Surface Mount		2.9 Ohm	N-Channel	MOSFET (Metal Oxide)	30 V	150 °C	6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 3A (Ta) 20W (Tc) Through Hole TO-220FL

Technical documentation and resources