Discrete Semiconductor Products

SI5457DC-T1-GE3

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MOSFET P-CH 20V 6A 1206-8

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Discrete Semiconductor Products

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MOSFET P-CH 20V 6A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5457DC-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	5.7 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI5457DC-T1-GE3	20 V	1206-8 ChipFET™	2.5 V 4.5 V	5.7 W	6 A	1.4 V	36 mOhm	-55 °C	150 °C	1000 pF	MOSFET (Metal Oxide)	Surface Mount	P-Channel	12 V	38 nC

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General part information

P-Channel 20 V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

Technical documentation and resources