Littelfuse Power Semi TO-220 3 H 3L image

Discrete Semiconductor Products

IXTP32P05T

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Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 50 V, 32 A, 0.039 OHM, TO-220, THROUGH HOLE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTP32P05T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 50 V, 32 A, 0.039 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP32P05T

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1975 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	39 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTP32P05T Series

DiscMSFT PChan-Trench Gate TO-220AB/FP

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Littelfuse/Commercial Vehicle Products IXTP32P05T	4.5 V	32 A	10 V	TO-220-3	P-Channel	83 W	-55 °C	150 °C	46 nC	Through Hole	50 V	15 V	39 mOhm	MOSFET (Metal Oxide)	1975 pF	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.66
		50	$ 2.14
		100	$ 1.76
		500	$ 1.49
		1000	$ 1.26
		2000	$ 1.20
		5000	$ 1.15

Description

General part information

IXTP32P05T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching