Discrete Semiconductor Products

MCU12P10-TP

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MOSFET P-CH 100V 12A DPAK

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Discrete Semiconductor Products

Active

MOSFET P-CH 100V 12A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU12P10-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	40 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCU12P06-TP	-55 °C	150 °C	3 V	80 mOhm	40 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	Surface Mount	4.5 V 10 V	650 pF	MOSFET (Metal Oxide)	12 A	20 V	12 nC	DPAK	60 V
Micro Commercial Components MCU12P10-TP	-55 °C	150 °C	3 V		40 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	P-Channel	Surface Mount	10 V	1055 pF	MOSFET (Metal Oxide)	12 A	20 V	25 nC	DPAK	100 V	200 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 12A (Tc) 40W Surface Mount DPAK

Technical documentation and resources