Specification	UPA1816GR-9JG-E1-A

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	8-TSSOP
Package / Case	4.4 mm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

UPA1816GR Series

N-Channel Mos Field Effect Transistor For Switching

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	FET Type	Package / Case	Package / Case	Package / Case
Renesas Electronics Corporation UPA1816GR-9JG-E1-A	MOSFET (Metal Oxide)	1570 pF	15 nC	12 V	1.5 V	9 A	Surface Mount	8-TSSOP	P-Channel	0.173 in	8-TSSOP	4.4 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	9000	$ 0.92

General part information

The UPA1816GR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources