Specification	DMHC4035LSD-13

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	4.5 A, 3.7 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC
Gate Charge (Qg) (Max) @ Vgs	11.1 nC
Input Capacitance (Ciss) (Max) @ Vds	574 pF, 587 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	65 mOhm, 45 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

DMHC4035LSDQ Series

40V Complementary Enhancement Mode MOSFET H-Bridge

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type
Diodes Inc DMHC4035LSDQ-13	-55 °C	150 °C	2 N and 2 P-Channel (Full Bridge)	AEC-Q101	3.7 A 4.5 A	574 pF 587 pF	Automotive	45 mOhm 65 mOhm	8-SOIC	1.5 W	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	12.5 nC	11.1 nC	40 V	Surface Mount
Diodes Inc DMHC4035LSD-13	-55 °C	150 °C	2 N and 2 P-Channel (Full Bridge)		3.7 A 4.5 A	574 pF 587 pF		45 mOhm 65 mOhm	8-SO	1.5 W	3 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	12.5 nC	11.1 nC	40 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.

Technical documentation and resources