Discrete Semiconductor Products

SIA427ADJ-T1-GE3

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MOSFET P-CH 8V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 8V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA427ADJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	19 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division SIA427ADJ-T1-GE3	50 nC	5 V	16 mOhm	P-Channel	19 W	2300 pF	PowerPAK® SC-70-6	800 mV	12 A	MOSFET (Metal Oxide)	-55 °C	150 °C	8 V	Surface Mount	1.2 V 4.5 V	PowerPAK® SC-70-6

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General part information

P-Channel 8 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources