Discrete Semiconductor Products

SIR882BDP-T1-RE3

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MOSFET N-CH 100V 16.5/67.5A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 16.5/67.5A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR882BDP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	67.5 A, 16.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3762 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 83.3 W
Rds On (Max) @ Id, Vgs	8.3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIR882DP-T1-GE3	1930 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	4.5 V 10 V	Surface Mount	100 V	-55 °C	150 °C	8.7 mOhm	20 V	58 nC	5.4 W 83 W	60 A	PowerPAK® SO-8	N-Channel	2.8 V
Vishay General Semiconductor - Diodes Division SIR882BDP-T1-RE3	3762 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	4.5 V 10 V	Surface Mount	100 V	-55 °C	150 °C	8.3 mOhm	20 V		5 W 83.3 W	16.5 A 67.5 A	PowerPAK® SO-8	N-Channel	2.3 V	81 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 16.5A (Ta), 67.5A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources