Zenode.ai Logo
Beta
TO-220-3
Discrete Semiconductor Products

FDP12N50NZ

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, 500 V, 11.5 A, 520 MΩ, TO-220

Deep-Dive with AI

Search across all available documentation for this part.

TO-220-3
Discrete Semiconductor Products

FDP12N50NZ

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, 500 V, 11.5 A, 520 MΩ, TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP12N50NZ
Current - Continuous Drain (Id) @ 25°C11.5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds1235 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)170 W
Rds On (Max) @ Id, Vgs520 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FDP12N50NZ Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources