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ONSEMI FDC6303N
Discrete Semiconductor Products

FDC6310P

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ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -2.2A, 125MΩ

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ONSEMI FDC6303N
Discrete Semiconductor Products

FDC6310P

Active
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -2.2A, 125MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC6310P
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs5.2 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Digi-Reel® 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.26
Tape & Reel (TR) 3000$ 0.23
6000$ 0.22
9000$ 0.20
30000$ 0.20
NewarkEach (Supplied on Full Reel) 3000$ 0.23
6000$ 0.23
12000$ 0.21
18000$ 0.21
30000$ 0.20
ON SemiconductorN/A 1$ 0.21

Description

General part information

FDC6310P Series

These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.