Discrete Semiconductor Products

FGH75T65SQDT_F155

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ON Semiconductor

650V FS4 TRENCH IGBT

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Discrete Semiconductor Products

FGH75T65SQDT_F155

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ON Semiconductor

650V FS4 TRENCH IGBT

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGH75T65SQDT_F155

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	128 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	76 ns
Supplier Device Package	TO-247-3
Switching Energy	70 µJ, 300 µJ
Td (on/off) @ 25°C	23 ns
Td (on/off) @ 25°C	120 ns
Test Condition	400 V, 15 V, 18.8 A, 4.7 Ohm
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

FGH75T65SQDTL4 Series

IGBT, 650 V, 75 A Field Stop Trench

Part	Td (on/off) @ 25°C	IGBT Type	Test Condition	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Switching Energy	Reverse Recovery Time (trr)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Package / Case	Mounting Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGH75T65SHDT-F155	28 ns 86 ns	Trench Field Stop	3 Ohm 15 V 75 A 400 V	650 V	455 W	3 mJ 750 µJ	76 ns	TO-247-3	150 A	225 A	-55 °C	175 ░C	123 nC	TO-247-3	Through Hole	2.1 V
ON Semiconductor FGH75T65SHD-F155		Trench Field Stop	3 Ohm 15 V 75 A 400 V	650 V	455 W	2.4 mJ 720 µJ	43.4 ns	TO-247-3	150 A	225 A	-55 °C	175 ░C	123 nC	TO-247-3	Through Hole	2.1 V	28 ns 80 ns
ON Semiconductor FGH75T65UPD-F155	42 ns	Trench Field Stop	3 Ohm 15 V 75 A 400 V	650 V	375 W	1.6 mJ 3.68 mJ	85 ns	TO-247	150 A	225 A	-55 °C	175 ░C	68 nC	TO-247-3	Through Hole	2.3 V		216 ns
ON Semiconductor FGH75T65SQDTL4	44 ns	Trench Field Stop	15 Ohm 15 V 18.8 A 400 V	650 V		266 µJ 307 µJ	76 ns	TO-247-4	150 A	300 A	-55 °C	175 ░C	128 nC	TO-247-4	Through Hole	2.1 V		276 ns
ON Semiconductor FGH75T65SQDT_F155	23 ns	Trench Field Stop	4.7 Ohm 15 V 18.8 A 400 V	650 V	375 W	70 µJ 300 µJ	76 ns	TO-247-3	150 A	300 A	-55 °C	175 ░C	128 nC	TO-247-3	Through Hole	2.1 V		120 ns
ON Semiconductor FGH75T65SHDTLN4	55 ns 189 ns	Trench Field Stop	15 V 15 Ohm 75 A 400 V	650 V	455 W	1.06 mJ 1.56 mJ	36 ns	TO-247-4	150 A	300 A	-55 °C	175 ░C	126 nC	TO-247-4	Through Hole	2.1 V
ON Semiconductor FGH75T65SQD-F155		Trench Field Stop		650 V	375 W	180 µJ 760 µJ	43 ns	TO-247-3	150 A	300 A	-55 °C	175 ░C	128 nC	TO-247-3	Through Hole
ON Semiconductor FGH75N60UFTU	27 ns	Field Stop	3 Ohm 15 V 75 A 400 V		452 W	1.35 mJ 3.05 mJ		TO-247-3	150 A	225 A	-55 °C	150 °C	250 nC	TO-247-3	Through Hole	2.4 V		128 ns	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGH75T65SQDTL4 Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rdgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

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Technical documentation and resources