Specification	FDP020N06B-F102

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	268 nC
Input Capacitance (Ciss) (Max) @ Vds	20930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDP020N06B Series

N-Channel PowerTrench® MOSFET 60V, 313A, 2mΩ

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDP020N06B-F102	333 W	4.5 V	20 V	TO-220-3	-55 °C	175 ░C	20930 pF	268 nC	MOSFET (Metal Oxide)	TO-220-3	2 mOhm	N-Channel	10 V	Through Hole	60 V	120 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.27
		10	$ 4.21
		100	$ 3.05
		500	$ 2.56
Newark	Each	500	$ 2.96
ON Semiconductor	N/A	1	$ 2.55

Description

General part information

FDP020N06B Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing