Discrete Semiconductor Products

GT30J341,Q

LTB

IGBT 600V 59A TO3P

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Discrete Semiconductor Products

LTB

IGBT 600V 59A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	GT30J341,Q

Current - Collector (Ic) (Max) [Max]	59 A
Current - Collector Pulsed (Icm)	120 A
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	230 W
Reverse Recovery Time (trr)	50 ns
Supplier Device Package	TO-3P(N)
Switching Energy	800 µJ, 600 µJ
Td (on/off) @ 25°C [Max]	280 ns
Td (on/off) @ 25°C [Min]	80 ns
Test Condition	30 A, 15 V, 300 V, 24 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)

Part	Operating Temperature	Power - Max [Max]	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Supplier Device Package	Current - Collector Pulsed (Icm)	Switching Energy	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
Toshiba Semiconductor and Storage GT30J341,Q	175 °C	230 W	SC-65-3 TO-3P-3	Through Hole	59 A	50 ns	280 ns	80 ns	TO-3P(N)	120 A	600 µJ 800 µJ	2 V	600 V	15 V 24 Ohm 30 A 300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)

Technical documentation and resources