Discrete Semiconductor Products

UF4002

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DIODE GEN PURP 100V 1A DO41

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4002

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, Axial, DO-41
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
NTE Electronics, Inc UF4005	600 V	17 pF	75 ns	1 A	Axial DO-204AL DO-41	150 °C	-65 C	200 mA 500 ns	1.7 V	DO-41	10 µA	Standard	Through Hole
NTE Electronics, Inc UF4002	100 V	17 pF	50 ns	1 A	Axial DO-204AL DO-41	150 °C	-65 C	200 mA 500 ns		DO-41	10 µA	Standard	Through Hole	1 V
NTE Electronics, Inc UF4004	400 V	17 pF	50 ns	1 A	Axial DO-204AL DO-41	150 °C	-65 C	200 mA 500 ns		DO-41	10 µA	Standard	Through Hole	1 V
NTE Electronics, Inc UF4006	800 V	17 pF	75 ns	1 A	Axial DO-204AL DO-41	150 °C	-65 C	200 mA 500 ns	1.7 V	DO-41	10 µA	Standard	Through Hole

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General part information

Diode 100 V 1A Through Hole DO-41

Technical documentation and resources

No documents available