Discrete Semiconductor Products

PSMNR82-30YLEX

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PSMNR82-30YLE/SOT669/LFPAK

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Discrete Semiconductor Products

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PSMNR82-30YLE/SOT669/LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR82-30YLEX

Current - Continuous Drain (Id) @ 25°C	330 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10131 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	268 W
Rds On (Max) @ Id, Vgs	0.87 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)
Freescale Semiconductor - NXP PSMNR82-30YLEX	Surface Mount	-55 °C	175 ░C	SC-100 SOT-669	2.2 V	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	30 V	10131 pF	330 A	N-Channel	268 W	0.87 mOhm	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 330A (Tc) 268W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources