Discrete Semiconductor Products

NTS4409NT1G

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SINGLE N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 25V, 750MA, 350MΩ

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Discrete Semiconductor Products

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SINGLE N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 25V, 750MA, 350MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTS4409NT1G

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	280 mW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Single N-Channel Small Signal MOSFET with ESD Protection 25V, 750mA, 350mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTS4409NT1G	25 V	4.5 V	2.7 V	8 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1.5 V	280 mW	4.5 V	1.5 nC	Surface Mount	N-Channel	SC-70 SOT-323	60 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Small Signal MOSFET25 V, 0.75 A, Single, N−Channel,ESD Protection, SC−70/SOT−323