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RJH1BF7RDPQ-80#T2
Discrete Semiconductor Products

RJH1BF7RDPQ-80#T2

Obsolete
Renesas Electronics Corporation

IGBT 1100V 60A 250W TO247

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RJH1BF7RDPQ-80#T2
Discrete Semiconductor Products

RJH1BF7RDPQ-80#T2

Obsolete
Renesas Electronics Corporation

IGBT 1100V 60A 250W TO247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRJH1BF7RDPQ-80#T2
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)100 A
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power - Max [Max]250 W
Supplier Device PackageTO-247
Vce(on) (Max) @ Vge, Ic [Max]2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]1100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00
6080$ 7.08
6080$ 7.08

Description

General part information

RJH1BF7RDPQ-80 Series

IGBT devices for induction heating (IH) (soft switching), recommended for 10 to 100 kHz frequencies, and not guaranteed against short circuit.

Documents

Technical documentation and resources