
Discrete Semiconductor Products
RJH1BF7RDPQ-80#T2
ObsoleteRenesas Electronics Corporation
IGBT 1100V 60A 250W TO247
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DocumentsRJH1BF7RDPQ-80 Datasheet

Discrete Semiconductor Products
RJH1BF7RDPQ-80#T2
ObsoleteRenesas Electronics Corporation
IGBT 1100V 60A 250W TO247
Deep-Dive with AI
DocumentsRJH1BF7RDPQ-80 Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RJH1BF7RDPQ-80#T2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 250 W |
| Supplier Device Package | TO-247 |
| Vce(on) (Max) @ Vge, Ic | 2.35 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RJH1BF7RDPQ-80 Series
IGBT devices for induction heating (IH) (soft switching), recommended for 10 to 100 kHz frequencies, and not guaranteed against short circuit.
Documents
Technical documentation and resources