LMG3425R050RQZR
Active600-V 50-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION, TEMPERATURE REPORTING AND IDEAL DIODE MODE
Deep-Dive with AI
Search across all available documentation for this part.
LMG3425R050RQZR
Active600-V 50-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION, TEMPERATURE REPORTING AND IDEAL DIODE MODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LMG3425R050RQZR |
|---|---|
| Current - Output (Max) [Max] | 32 A |
| Fault Protection | UVLO, Over Temperature, Current Limiting (Adjustable), Short Circuit |
| Features | Slew Rate Controlled, Status Flag |
| Input Type | Non-Inverting |
| Interface | Logic, PWM |
| Mounting Type | Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | High Side |
| Output Type | N/P-Channel |
| Package / Case | 54-VQFN Exposed Pad |
| Ratio - Input:Output [custom] | 1:1 |
| Rds On (Typ) | 43 mOhm |
| Supplier Device Package | 54-VQFN (12x12) |
| Switch Type | General Purpose |
| Voltage - Load [Max] | 600 V |
| Voltage - Load [Min] | 0 V |
| Voltage - Supply (Vcc/Vdd) [Max] | 18 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 7.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 12.60 | |
| Texas Instruments | LARGE T&R | 1 | $ 16.15 | |
| 100 | $ 14.11 | |||
| 250 | $ 10.88 | |||
| 1000 | $ 9.73 | |||
Description
General part information
LMG3425R050 Series
The LMG3425R050 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3425R050 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
Documents
Technical documentation and resources
