Discrete Semiconductor Products

DMN33D8LDW-7

Active

Diodes Inc

TRANSISTOR: N-MOSFET X2; UNIPOLAR; 30V; 200MA; IDM: 0.8A; 220MW

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DocumentsDatasheet Package PDF +1

Discrete Semiconductor Products

DMN33D8LDW-7

Active

Diodes Inc

TRANSISTOR: N-MOSFET X2; UNIPOLAR; 30V; 200MA; IDM: 0.8A; 220MW

Deep-Dive with AI

DocumentsDatasheet Package PDF +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN33D8LDW-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	48 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

DMN33D8LDWQ Series

Dual N-Channel Enhancement Mode MOSFET

Part	Technology	Drain to Source Voltage (Vdss)	Qualification	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Grade	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Diodes Inc DMN33D8LTQ-7	MOSFET (Metal Oxide)	30 V	AEC-Q101	240 mW	SOT-523	1.5 V	5 Ohm	SOT-523	Surface Mount	Automotive	N-Channel	0.55 nC	-55 °C	150 °C	4 V	2.5 V	48 pF	115 mA	20 V
Diodes Inc DMN33D8LV-7	MOSFET (Metal Oxide)	30 V			SOT-563 SOT-666	1.5 V	2.4 Ohm	SOT-563	Surface Mount				-55 °C	150 °C			48 pF	350 mA		1.23 nC	2 N-Channel (Dual)	430 mW
Diodes Inc DMN33D9LV-7A	MOSFET (Metal Oxide)	30 V			SOT-563 SOT-666	1.4 V	2.4 Ohm	SOT-563	Surface Mount				-55 °C	150 °C			48 pF	350 mA		1.23 nC	2 N-Channel (Dual)	430 mW
Diodes Inc DMN33D8LDW-7	MOSFET (Metal Oxide)	30 V			6-TSSOP SC-88 SOT-363	1.5 V	2.4 Ohm	SOT-363	Surface Mount				-55 °C	150 °C			48 pF	250 mA		1.23 nC	2 N-Channel (Dual)	350 mW
Diodes Inc DMN33D8LT-13	MOSFET (Metal Oxide)	30 V		240 mW	SOT-523	1.5 V	5 Ohm	SOT-523	Surface Mount		N-Channel	0.55 nC	-55 °C	150 °C	4 V	2.5 V	48 pF	115 mA	20 V
Diodes Inc DMN33D8LDWQ-13	MOSFET (Metal Oxide)	30 V	AEC-Q101		6-TSSOP SC-88 SOT-363	1.5 V	2.4 Ohm	SOT-363	Surface Mount	Automotive			-55 °C	150 °C			48 pF	250 mA		1.23 nC	2 N-Channel (Dual)	350 mW
Diodes Inc DMN33D9LV-7	MOSFET (Metal Oxide)	30 V			SOT-563 SOT-666	1.4 V	2.4 Ohm	SOT-563	Surface Mount				-55 °C	150 °C			48 pF	350 mA		1.23 nC	2 N-Channel (Dual)	430 mW
Diodes Inc DMN33D9LV-13	MOSFET (Metal Oxide)	30 V			SOT-563 SOT-666	1.4 V	2.4 Ohm	SOT-563	Surface Mount				-55 °C	150 °C			48 pF	350 mA		1.23 nC	2 N-Channel (Dual)	430 mW
Diodes Inc DMN33D8LTQ-13	MOSFET (Metal Oxide)	30 V	AEC-Q101	240 mW	SOT-523	1.5 V	5 Ohm	SOT-523	Surface Mount	Automotive	N-Channel	0.55 nC	-55 °C	150 °C	4 V	2.5 V	48 pF	115 mA	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.37
		10	$ 0.26
		100	$ 0.13
		500	$ 0.11
		1000	$ 0.08
	Digi-Reel®	1	$ 0.37
		10	$ 0.26
		100	$ 0.13
		500	$ 0.11
		1000	$ 0.08
	Tape & Reel (TR)	3000	$ 0.07
		6000	$ 0.06
		9000	$ 0.05
		30000	$ 0.05
		75000	$ 0.04
		150000	$ 0.04
TME	N/A	1	$ 0.27
		10	$ 0.17
		50	$ 0.14
		100	$ 0.13
		250	$ 0.11
		500	$ 0.10

Description

General part information

DMN33D8LDWQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document