Discrete Semiconductor Products

BC640TAR

Obsolete

ON Semiconductor

TRANS PNP 80V 1A TO92-3

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Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

BC640TAR

Obsolete

ON Semiconductor

TRANS PNP 80V 1A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC640TAR

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

BC640 Series

PNP Bipolar Transistor

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package	Transistor Type	Operating Temperature
ON Semiconductor BC640	Through Hole	100 nA	500 mV	500 mA	150 MHz	40	625 mW	80 V	TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	TO-226	PNP
ON Semiconductor BC640G	Through Hole	100 nA	500 mV	500 mA	150 MHz	40	625 mW	80 V	TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	TO-226	PNP
ON Semiconductor BC640_J35Z	Through Hole	100 nA	500 mV	1 A	100 MHz	40	1 W	80 V	TO-226-3 TO-92-3			TO-92-3		PNP	150 °C
ON Semiconductor BC640-016G	Through Hole	100 nA	500 mV	500 mA	150 MHz	100	625 mW	80 V	TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	TO-226	PNP
ON Semiconductor BC640ZL1G	Through Hole	100 nA	500 mV	500 mA	150 MHz	40	625 mW	80 V	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	TO-226	PNP
ON Semiconductor BC640TAR	Through Hole	100 nA	500 mV	1 A	100 MHz	40	1 W	80 V	TO-226-3 TO-92-3			TO-92-3		PNP	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC640 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources