Littelfuse Power Semi TO-220 3 H 3L image

Discrete Semiconductor Products

IXFP3N120

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Littelfuse/Commercial Vehicle Products

DISC MSFT N-CH HIPERFETS-STD TO-220AB/FP/ TUBE

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Discrete Semiconductor Products

IXFP3N120

Active

Littelfuse/Commercial Vehicle Products

DISC MSFT N-CH HIPERFETS-STD TO-220AB/FP/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP3N120

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFP3N120 Series

Disc MSFT N-CH HiPerFETs-Std TO-220AB/FP

Part	FET Type	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Littelfuse/Commercial Vehicle Products IXFP3N120	N-Channel	20 V	TO-220-3	10 V	200 W	39 nC	4.5 Ohm	TO-220-3	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3 A	Through Hole	1050 pF	1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.19
		10	$ 5.63
		100	$ 4.34
Newark	Each	250	$ 4.90
		500	$ 4.55

Description

General part information

IXFP3N120 Series

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources