Specification	NVF3055L108T3G

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

NVF3055-100 Series

Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ

Part	Vgs(th) (Max) @ Id	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVF3055-100T1G	4 V	Automotive	10 V	1.3 W	20 V	22 nC	3 A	MOSFET (Metal Oxide)	110 mOhm	AEC-Q101	455 pF	60 V	TO-261-4 TO-261AA	N-Channel	-55 °C	175 ░C	SOT-223 (TO-261)	Surface Mount
ON Semiconductor NVF3055L108T3G	2 V	Automotive	5 V	1.3 W	15 V		3 A	MOSFET (Metal Oxide)	120 mOhm	AEC-Q101	440 pF	60 V	TO-261-4 TO-261AA	N-Channel	-55 °C	175 ░C	SOT-223 (TO-261)	Surface Mount	15 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVF3055-100 Series

Automotive Power MOSFET, 60V, 3A, 120 mOhm, Single N-Channel, SOT-223, Logic Level. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.