Specification	FCP170N60

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCP170N60 Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220

Part	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FCP170N60	MOSFET (Metal Oxide)	22 A	N-Channel	600 V	20 V	3.5 V	TO-220-3	-55 °C	150 °C	55 nC	10 V	TO-220-3	Through Hole	227 W	170 mOhm	2860 pF
ON Semiconductor FCP170N60	MOSFET (Metal Oxide)	22 A	N-Channel	600 V	20 V	3.5 V	TO-220-3	-55 °C	150 °C	55 nC	10 V	TO-220-3	Through Hole	227 W	170 mOhm	2860 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	85	$ 3.56
		85	$ 3.56
	Tube	1	$ 6.31
		1	$ 6.31
		50	$ 3.40
		50	$ 3.40
		100	$ 3.12
		100	$ 3.12
		500	$ 3.07
		500	$ 3.07
Newark	Each	500	$ 3.27
ON Semiconductor	N/A	1	$ 2.83

Description

General part information

FCP170N60 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency