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TO-268
Discrete Semiconductor Products

IXTT1N450HV

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFET NCH STD-VERYHIVOLT TO-268AA

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TO-268
Discrete Semiconductor Products

IXTT1N450HV

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFET NCH STD-VERYHIVOLT TO-268AA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTT1N450HV
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)4500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]520 W
Rds On (Max) @ Id, Vgs [Max]85 Ohm
Supplier Device PackageTO-268AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 49.80
30$ 41.73
120$ 38.95

Description

General part information

IXTT1N450HV Series

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources