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Technical Specifications

Parameters and characteristics for this part

SpecificationPHB45NQ10T,118
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.76
10$ 1.46
100$ 1.16
Digi-Reel® 1$ 1.76
10$ 1.46
100$ 1.16
N/A 2458$ 3.27
Tape & Reel (TR) 800$ 0.98
1600$ 0.83
2400$ 0.79
5600$ 0.76

Description

General part information

PHB45NQ10 Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.