Discrete Semiconductor Products

MCM1567-TP

Active

MOSFET P-CH 20V 9A DFN2020-6J

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 9A DFN2020-6J

Technical Specifications

Parameters and characteristics for this part

Specification	MCM1567-TP

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds	2760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	DFN2020-6J
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Micro Commercial Components MCM1567-TP	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	2760 pF	9 A	20 V	2.5 V 4.5 V	12 V	P-Channel	18 mOhm	1 V	2 W	34 nC	DFN2020-6J

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 9A (Ta) 2W (Ta) Surface Mount DFN2020-6J

Technical documentation and resources