Discrete Semiconductor Products

2SD2662T100

Active

BIPOLAR TRANSISTORS - BJT TRANSISTOR BIPOLAR NPN; 30V 1.5A

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT TRANSISTOR BIPOLAR NPN; 30V 1.5A

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2662T100

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	270
Frequency - Transition	330 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	MPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Operating Temperature	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
Rohm Semiconductor 2SD2662T100	150 °C	TO-243AA	Surface Mount	350 mV	100 nA	2 W	270	30 V	NPN	330 MHz	MPT3	1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 30 V 1.5 A 330MHz 2 W Surface Mount MPT3

Technical documentation and resources

No documents available