MCQ12N10Y-TP

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N-CHANNEL MOSFET,SOP-8

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ12N10Y-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1135 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	3.1 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components MCQ12N10Y-TP	8-SOP	N-Channel	4 V	17 mOhm	100 V	10 V	16 nC	3.1 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	12 A	20 V	Surface Mount	-55 °C	150 °C	1135 pF

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General part information

N-Channel 100 V 12A 3.1W Surface Mount 8-SOP

Technical documentation and resources