Specification	FGY75T120SWD

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	214 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	503 W
Reverse Recovery Time (trr)	307 ns
Supplier Device Package	TO-247-3
Switching Energy	5 mJ, 2.32 mJ
Td (on/off) @ 25°C	171 ns
Td (on/off) @ 25°C	42 ns
Test Condition	15 V, 4.7 Ohm, 600 V, 75 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

FGY75T120SWD Series

1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging

Part	Reverse Recovery Time (trr)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Mounting Type	Supplier Device Package	Current - Collector Pulsed (Icm)	IGBT Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C
ON Semiconductor FGY75T120SWD	307 ns	214 nC	-55 °C	175 ░C	4.7 Ohm 15 V 75 A 600 V	Through Hole	TO-247-3	300 A	Field Stop	TO-247-3 Variant	1200 V	503 W	150 A	2.32 mJ 5 mJ	2 V	171 ns	42 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.11
		10	$ 6.96
		100	$ 5.17
		500	$ 4.63
Newark	Each	1	$ 11.11
		10	$ 9.98
		25	$ 8.84
		50	$ 7.94
		100	$ 7.72
		250	$ 7.57
ON Semiconductor	N/A	1	$ 4.93

Description

General part information

FGY75T120SWD Series

Using the novel field stop 7thgeneration IGBT technology and the Gen7 Diode in TP247 3-lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS and ESS.