Specification	XPH4R714MC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5640 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW
Power Dissipation (Max)	132 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2.1 V

XPH4R714MC Series

Part	Technology	Grade	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Qualification	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage XPH4R714MC,L1XHQ	MOSFET (Metal Oxide)	Automotive	4.5 V 10 V	60 A	160 nC	AEC-Q101	10 V	-20 V	2.1 V	5640 pF	5	8-SOP Advance	5	4.7 mOhm	Surface Mount	P-Channel	40 V	960 mW	132 W	8-PowerVDFN	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 60A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources