Discrete Semiconductor Products

PSMN7R6-100BSEJ

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PSMN7R6-100BSE - N-CHANNEL 100 V 7.6 MΩ STANDARD LEVEL MOSFET IN D2PAK@EN-US D2PAK 3-PIN

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Discrete Semiconductor Products

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PSMN7R6-100BSE - N-CHANNEL 100 V 7.6 MΩ STANDARD LEVEL MOSFET IN D2PAK@EN-US D2PAK 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R6-100BSEJ

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	128 nC
Input Capacitance (Ciss) (Max) @ Vds	7110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	296 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology
Freescale Semiconductor - NXP PSMN7R6-100BSEJ	20 V	128 nC	100 V	D2PAK	7.6 mOhm	7110 pF	296 W	Surface Mount	10 V	75 A	N-Channel	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 75A (Tj) 296W (Tc) Surface Mount D2PAK

Technical documentation and resources