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SOT-23-3
Discrete Semiconductor Products

FJV3102RMTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR WITH BIAS RESISTOR

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SOT-23-3
Discrete Semiconductor Products

FJV3102RMTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR WITH BIAS RESISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFJV3102RMTF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 hFE
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]200 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
Supplier Device PackageSOT-23-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 7267$ 0.04
7267$ 0.04

Description

General part information

FJV3104R Series

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Documents

Technical documentation and resources