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NEXNXPPMN49EN,135
Discrete Semiconductor Products

UPA602T-T1-A

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

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Search across all available documentation for this part.

NEXNXPPMN49EN,135
Discrete Semiconductor Products

UPA602T-T1-A

Obsolete
Renesas Electronics Corporation

POWER MOSFETS FOR AUTOMOTIVE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUPA602T-T1-A
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)50 V
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds16 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Power - Max [Max]300 mW
Rds On (Max) @ Id, Vgs25 Ohm
Supplier Device PackageSC-59
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 854$ 0.35

Description

General part information

UPA602T Series

Power MOSFETs for Automotive

Documents

Technical documentation and resources