Zenode.ai Logo
Beta
10-DFN PKG
Integrated Circuits (ICs)

HIP2106AIRZ-T

Obsolete
Renesas Electronics Corporation

LOW VOLTAGE DRIVER FOR SYNCHRONOUS RECTIFICATION

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
10-DFN PKG
Integrated Circuits (ICs)

HIP2106AIRZ-T

Obsolete
Renesas Electronics Corporation

LOW VOLTAGE DRIVER FOR SYNCHRONOUS RECTIFICATION

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHIP2106AIRZ-T
Channel TypeSynchronous
Current - Peak Output (Source, Sink)4 A
Current - Peak Output (Source, Sink)-
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH [custom]1.9 V
Logic Voltage - VIL, VIH [custom]1.3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case10-VFDFN Exposed Pad
Supplier Device Package10-DFN (3x3)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

HIP2106A Series

The HIP2106A is a high frequency MOSFET driver optimized to drive two N-channel power MOSFETs in a synchronous buck converter topology. This driver, combined with Renesas multi-phase buck PWM controllers, forms a complete single-stage core-voltage regulator solution with high-efficiency performance at high switching frequency for advanced microprocessors. The HIP2106A is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented using an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The HIP2106A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The HIP2106A also features an input that recognizes a high-impedance state, working together with Renesas multi-phase 3. 3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.

Documents

Technical documentation and resources