Discrete Semiconductor Products

2SC4212H

Obsolete

TRANS NPN 300V 0.2A TO126B-A1

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Discrete Semiconductor Products

Obsolete

TRANS NPN 300V 0.2A TO126B-A1

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4212H

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	2 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	5 W
Supplier Device Package	TO-126B-A1
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	300 V

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]
Panasonic Electronic Components 2SC4212H	2 µA	150 °C	TO-126-3 TO-225AA	TO-126B-A1	40	Through Hole	1 V	200 mA	300 V	NPN	5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.28

General part information

Bipolar (BJT) Transistor NPN 300 V 200 mA 80MHz 5 W Through Hole TO-126B-A1

Technical documentation and resources