Integrated Circuits (ICs)

NCP81075DR2G

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ON Semiconductor

HIGH SIDE AND LOW SIDE GATE DRIVER, HIGH-FREQUENCY, 180 V, 4A CAPABILITY

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DocumentsProduct Change Notice EN Datasheet +1

Integrated Circuits (ICs)

NCP81075DR2G

Active

ON Semiconductor

HIGH SIDE AND LOW SIDE GATE DRIVER, HIGH-FREQUENCY, 180 V, 4A CAPABILITY

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NCP81075DR2G

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	4 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	140 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	7 ns
Rise / Fall Time (Typ) [custom]	8 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	8.5 V

NCP81075 Series

High Side and Low Side Gate Driver, High-Frequency, 180 V, 4A capability

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Mounting Type	Number of Drivers	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Gate Type	Package / Case [y]	Package / Case [x]
ON Semiconductor NCP81075MTTXG	-40 °C	140 °C	10-WDFN Exposed Pad	4 A	4 A	0.8 V 2.7 V	High-Side Low-Side	20 V	8.5 V	7 ns	8 ns	10-WDFN (4x4)	Surface Mount	2	Independent	200 V	Non-Inverting	N-Channel MOSFET
ON Semiconductor NCP81075DR2G	-40 °C	140 °C	8-SOIC	4 A	4 A	0.8 V 2.7 V	High-Side Low-Side	20 V	8.5 V	7 ns	8 ns	8-SOIC	Surface Mount	2	Independent	200 V	Non-Inverting	N-Channel MOSFET	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.32
		10	$ 2.09
		25	$ 1.97
		100	$ 1.58
		250	$ 1.38
		500	$ 1.34
		1000	$ 1.06
	Digi-Reel®	1	$ 2.32
		10	$ 2.09
		25	$ 1.97
		100	$ 1.58
		250	$ 1.38
		500	$ 1.34
		1000	$ 1.06
Newark	Each (Supplied on Cut Tape)	1	$ 1.52
ON Semiconductor	N/A	1	$ 0.90

Description

General part information

NCP81075 Series

The NCP81075 is a high performance dual mosfet (high side and low side) gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode and offers drive capability up to 4A. The high side and low side drivers are independently controlled with a matched typical propagation delay of 3.5ns.This driver is ideally suited for use in high voltage buck applications, isolated power supplies, 2 switch and active clamp forward converters. the device can also be used in solar optimizer and solar inverter applications.The part is offered in a SO8, 8 pin DFN, and 10 pin DFN package and fully specified from -40C to 140C.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet