Discrete Semiconductor Products

BSP126,135

NRND

MOSFET N-CH 250V 375MA SOT223

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Discrete Semiconductor Products

NRND

MOSFET N-CH 250V 375MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP126,135

Current - Continuous Drain (Id) @ 25°C	375 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Mounting Type	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case
Freescale Semiconductor - NXP BSP126,135	375 mA	MOSFET (Metal Oxide)	250 V	5 Ohm	20 V	SOT-223	Surface Mount	1.5 W	N-Channel	10 V	-55 °C	150 °C	2 V	120 pF	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 375mA (Ta) 1.5W (Ta) Surface Mount SOT-223

Technical documentation and resources