Discrete Semiconductor Products
UT6JE5TCR
ActiveRohm Semiconductor
-100V 1.0A, DUAL PCH+PCH, DFN2020-8D, POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
UT6JE5TCR
ActiveRohm Semiconductor
-100V 1.0A, DUAL PCH+PCH, DFN2020-8D, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UT6JE5TCR |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-PowerUDFN |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 840 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3084 | $ 0.46 | |
Description
General part information
UT6JE5 Series
UT6JE5 is a low on-resistance MOSFET ideal for switching applications. This product includes two -100V MOSFETs in a small surface mount package (DFN2020-8D).
Documents
Technical documentation and resources