Discrete Semiconductor Products

FGY120T65SPD-F085

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IGBT, 650V, 120A FIELD STOP, TRENCH WITH SOFT FAST RECOVERY DIODE

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Discrete Semiconductor Products

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IGBT, 650V, 120A FIELD STOP, TRENCH WITH SOFT FAST RECOVERY DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	FGY120T65SPD-F085

Current - Collector (Ic) (Max) [Max]	240 A
Current - Collector Pulsed (Icm)	378 A
Gate Charge	162 nC
Grade	Automotive
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	882 W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	123 ns
Supplier Device Package	TO-247-3
Switching Energy	6.8 mJ, 3.5 mJ
Td (on/off) @ 25°C	102 ns, 53 ns
Test Condition	400 V, 5 Ohm, 15 V, 120 A
Vce(on) (Max) @ Vge, Ic	1.85 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode

Part	Gate Charge	Test Condition	Qualification	IGBT Type	Grade	Current - Collector Pulsed (Icm)	Mounting Type	Package / Case	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector (Ic) (Max) [Max]
ON Semiconductor FGY120T65SPD-F085	162 nC	5 Ohm 15 V 120 A 400 V	AEC-Q101	Trench Field Stop	Automotive	378 A	Through Hole	TO-247-3	53 ns 102 ns	-55 °C	175 ░C	882 W	650 V	123 ns	TO-247-3	1.85 V	3.5 mJ 6.8 mJ	240 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode

Technical documentation and resources