Discrete Semiconductor Products

MCU01N60A-TP

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N-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU01N60A-TP

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	37.8 W
Rds On (Max) @ Id, Vgs	9 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Micro Commercial Components MCU01N60A-TP	-55 °C	150 °C	1.3 A	30 V	TO-252 (DPAK)	Surface Mount	9 Ohm	10 V	37.8 W	125 pF	MOSFET (Metal Oxide)	N-Channel	6 nC	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Micro Commercial Components MCU01N60-TP	-55 °C	150 °C	1 A	30 V	TO-252 (DPAK)	Surface Mount		10 V	17 W		MOSFET (Metal Oxide)	N-Channel		600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 Ohm	135 pF	5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 1.3A (Tc) 37.8W (Tj) Surface Mount TO-252 (DPAK)

Technical documentation and resources