Discrete Semiconductor Products

PJQ5443_R2_00001

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TRANSISTOR MOSFET P-CH 40V 50A 8-PIN DFN T/R

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Discrete Semiconductor Products

Active

TRANSISTOR MOSFET P-CH 40V 50A 8-PIN DFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5443_R2_00001

Current - Continuous Drain (Id) @ 25°C	9 A, 50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2767 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	63 W, 2 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Package / Case
Panjit International Inc. PJQ5443-AU_R2_000A1	Surface Mount	Automotive	2767 pF	9 A 50 A	23 nC	12 mOhm	DFN5060-8	150 °C	-55 °C	P-Channel	MOSFET (Metal Oxide)	20 V	2 W 63 W	4.5 V 10 V	40 V	AEC-Q101	2.5 V	8-PowerVDFN
Panjit International Inc. PJQ5443_R2_00001	Surface Mount		2767 pF	9 A 50 A	23 nC	12 mOhm	DFN5060-8	150 °C	-55 °C	P-Channel	MOSFET (Metal Oxide)	20 V	2 W 63 W	4.5 V 10 V	40 V		2.5 V	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 9A (Ta), 50A (Tc) 2W (Ta), 63W (Tc) Surface Mount DFN5060-8

Technical documentation and resources