Specification	NVTFS4824NTAG

Current - Continuous Drain (Id) @ 25°C	18.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	21 W, 3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NVTFS4824N Series

Single N-Channel Power MOSFET 30V, 46A, 4.7mΩ

Part	Qualification	Grade	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVTFS4824NTAG	AEC-Q101	Automotive	1740 pF	18.2 A	2.5 V	-55 °C	175 ░C	4.5 V 10 V	8-PowerWDFN	30 V	3.2 W 21 W	20 V	Surface Mount	N-Channel	8-WDFN (3.3x3.3)	4.7 mOhm	MOSFET (Metal Oxide)	14 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVTFS4824N Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.