Zenode.ai Logo
Beta
ONSEMI ISL9V3040P3
Discrete Semiconductor Products

FQP17P06

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 17 A, 60 V, 120 MOHM, -10 V, -4 V ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

ONSEMI ISL9V3040P3
Discrete Semiconductor Products

FQP17P06

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 17 A, 60 V, 120 MOHM, -10 V, -4 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFQP17P06
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)79 W
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.48
10$ 1.20
100$ 1.15
250$ 0.99
500$ 0.85
DigikeyTube 1$ 2.69
10$ 1.74
100$ 1.19
500$ 0.96
1000$ 0.89
2000$ 0.82
5000$ 0.78
NewarkEach 1$ 2.26
10$ 1.73
100$ 1.65
500$ 1.36
1000$ 1.32
3000$ 1.28
ON SemiconductorN/A 1$ 0.72

Description

General part information

FQP17N40 Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.